专利名称：Method for forming silicide and
semiconductor device formed thereby
发明人：Tung-Heng Hsieh,Chien-Li Cheng,Yi-Shien
Mor,Yung-Shun Chen
申请号：US11107625申请日：20050415
公开号：US20060231910A1公开日：20061019
专利附图：
摘要：A method for forming silicide and a semiconductor device formed thereby. A Si-containing polycrystalline region is converted to an amorphous region, and annealed to
form a regrown polycrystalline region having an increased grain size. A silicide layer isformed by reacting a metal and the regrown polycrystalline region having the increasedgrain size.
申请人：Tung-Heng Hsieh,Chien-Li Cheng,Yi-Shien Mor,Yung-Shun Chen
地址：Thudong town TW,Hsinchu City TW,Hsinchu City TW,Hsinchu City TW
国籍：TW,TW,TW,TW
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