专利名称：Method for forming silicide and
semiconductor device formed thereby
发明人：Tung-Heng Hsieh,Chien-Li Cheng,Yi-Shien
Mor,Yung-Shun Chen
申请号：US11107625申请日：20050415公开号：US07382028B2公开日：20080603
专利附图：
摘要：A method for forming silicide and a semiconductor device formed thereby. A Si-containing polycrystalline region is converted to an amorphous region, and annealed to
form a regrown polycrystalline region having an increased grain size. A silicide layer isformed by reacting a metal and the regrown polycrystalline region having the increasedgrain size.
申请人：Tung-Heng Hsieh,Chien-Li Cheng,Yi-Shien Mor,Yung-Shun Chen
地址：Hsinchu TW,Hsinchu TW,Hsinchu TW,Hsinchu TW
国籍：TW,TW,TW,TW
代理机构：Thomas, Kayden, Horstemeyer & Risley
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容