专利名称：Method for forming contact in
semiconductor device
发明人：Min-Yong Lee申请号：US10819189申请日：20040407公开号：US07060610B2公开日：20060613
专利附图：
摘要：The present invention relates to a method for forming a contact in a
semiconductor device. The method includes the steps of: forming a P-type source/drainjunction in a substrate; forming an inter-layer insulation layer on the substrate; forming a
contact hole exposing at least one portion of the P-type source/drain junction by etchingthe inter-layer insulation layer; forming a plug ion implantation region by implantingboron fluoride ions into the exposed portion of the P-type source/drain junction, theboron fluoride ion having the less bonding number of fluorine than BF; performing anactivation annealing process for activating dopants implanted into the plug ion
implantation region; and forming a contact connected to the P-type source/drain junctionthrough the contact hole.
申请人：Min-Yong Lee
地址：Ichon-shi KR
国籍：KR
代理机构：Mayer, Brown, Rowe & Maw LLP
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