Non-volatile memory manufacturing method using STI

专利名称：Non-volatile memory manufacturing

method using STI trench implantation

发明人：Tze Ho Simon Chan,Weining Li,Elgin Quek,Jia

Zhen Zheng,Pradeep RamachandramurthyYelehanka,Tommy Lai

申请号：US10703289申请日：20031106公开号：US08236646B2公开日：20120807

专利附图：

摘要：A method for manufacturing an integrated circuit structure includes providing a

semiconductor substrate and forming two trenches in the semiconductor substrate todefine an active region therebetween. An implanted source region is formed in one of thetrenches on one side of the active region. An implanted drain region is formed in theother trench on the other side of the active region. Shallow trench isolations are thenformed in the trenches. One or more gates are formed over the active region, andcontacts to the implanted source region and the implanted drain region are formed.

申请人：Tze Ho Simon Chan,Weining Li,Elgin Quek,Jia Zhen Zheng,PradeepRamachandramurthy Yelehanka,Tommy Lai

地址：Singapore SG,Shanghai CN,Singapore SG,Singapore SG,Singapore SG,Kowloon HK

国籍：SG,CN,SG,SG,SG,HK

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