专利名称：METAL CAPACITOR AND METHOD OF
MAKING THE SAME
发明人：Chin-Sheng Yang申请号：US12255652申请日：20081021
公开号：US20100096726A1公开日：20100422
专利附图：
摘要：A method of making a metal capacitor includes the following steps. A dielectriclayer having a metal interconnection and a capacitor electrode is provided. Then, atreatment is performed to increase the dielectric constant of the dielectric layer
surrounding the capacitor electrode. The treatment can be UV radiation, a plasmatreatment or an ion implantation. Accordingly, the metal capacitor will have a highercapacitance and RC delay between the metal interconnection and the dielectric layer canbe prevented.
申请人：Chin-Sheng Yang
地址：Hsinchu City TW
国籍：TW
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