TPC8402资料

TPC8402

Lithium Ion Secondary Battery Applications Notebook PCs

Portable Equipment Applications

󰁺 Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.) N Channel RDS (ON) = 37 mΩ (typ.) 󰁺 High forward transfer admittance : P Channel |Yfs| = 7 S (typ.) N Channel |Yfs| = 6 S (typ.) 󰁺 Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) 󰁺 Enhancement−mode : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID = 1mA)

󰃧

Unit: mm󰃧

Maximum Ratings (Ta = 25°C)

Rating

Characteristics Symbol P Channel N Channel

Drain-source voltage

VDSS

Unit

JEDEC JEITA

― ―

−30 30 V −30 30 V ±20 V Drain-gate voltage (RGS = 20 kΩ) VDGR Gate-source voltage

VGSS ±20 TOSHIBA 2-6J1E Weight: 0.080 g (typ.)

DC (Note 1) ID −4.5 5 A Drain current

−18 20 Pulse (Note 1) IDP Drain power

dissipation (t = 10s)

(Note 2a) Drain power dissipation (t = 10s)

(Note 2b)

Single-device operation PD (1) 1.5 (Note 3a) Single-device value at dual operation (Note 3b)

PD (2) 1.0 1.5 1.0 W

0.75 0.45 32.5 (Note 4b)

mJ

Circuit Configuration

Single-device operation PD (1) 0.75 (Note 3a) Single-device value at dual operation (Note 3b)

PD (2) 0.45 EAS IAR

26.3 (Note 4a)

Single pulse avalanche energy Avalanche current

Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range

−4.5 5 A EAR 0.10 mJ Tch 150 °C Tstg

−55~150 °C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the

next page. This transistor is an electrostatic sensitive device. Please handle with caution.

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TPC8402 Thermal Characteristics

Characteristics Symbol Max Unit Single-device operation

Rth (ch-a) (1) 83.3 (Note 3a)

Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at

dual operation Rth (ch-a) (2) 125 (Note 3b)

Single-device operation

Rth (ch-a) (1) 167 (Note 3a)

°C/W

Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at

dual operation Rth (ch-a) (2) 278 (Note 3b)

Marking

TPC8402 * Type

Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2:

a) Device mounted on a glass-epoxy board (a)

FR-4

25.4 × 25.4 × 0.8 (unit: mm)

FR-4

25.4 × 25.4 × 0.8 (unit: mm)

b) Device mounted on a glass-epoxy board (b)

(a) (b)

Note 3:

a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.) Note 4:

a) VDD = −24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = −4.5 A b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 5.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature

Note 6: • on lower left of the marking indicates Pin 1.

* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.)

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TPC8402 P-0ch

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Gate leakage current Drain cut−OFF current

Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance

Reverse transfer capacitance Output capacitance

Rise time

IGSS IDSS V (BR) DSS V (BR) DSX

Vth RDS (ON) RDS (ON)

Test Condition

Min Typ. Max Unit — — ±10 µA — — −10 µA −30 — — −15 — — V

VGS = ±16 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −2.2 A VGS = −10 V, ID = −2.2 A

−0.8 — −2.0 V — 55 65 mΩ

— 27 35 3.5 7 — S — 970 — — 180 — pF — 370 — |Yfs| VDS = −10 V, ID = −2.2 A Ciss

Crss VDS = −10 V, VGS = 0 V, f = 1 MHz Coss

tr — 17 — Turn−ON time

Switching time

Fall time

ton — 20 — ns

tf — 75 — toff

— 160 — Turn−OFF time

Total gate charge (Gate−source

plus gate−drain) Gate−source charge 1 Gate−drain (“miller”) charge

Qg — 28 — V ≈ −24 V, VGS = −10 V, ID = −4.5 A Qgs1 DDQgd

nC

— 6 — — 12 —

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Drain reverse current

Pulse (Note 1) IDRP VDSF

Test Condition

Min Typ. Max Unit — — — −18 A IDR = −4.5 A, VGS = 0 V

— — 1.2 V Forward voltage (diode)

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TPC8402 N-ch

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Gate leakage current Drain cut−OFF current Drain−source breakdown voltage

Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance

Reverse transfer capacitance Output capacitance

Rise time

IGSS IDSS V (BR) DSS

Vth RDS (ON) RDS (ON)

Test Condition

Min Typ. Max Unit — — ±10 µA ― 30 0.8

― 10 µA ―

― V VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A

― 2.0 V ― 58 80 mΩ ― 37 50 mΩ 3 6 ― S ― 475 ―

|Yfs| VDS = 10 V, ID = 2.5 A Ciss Crss Coss tr ton tf toff Qg Qgs1 Qgd

VDD ≈ 24 V, VGS = 10 V, ID = 5 A VDS = 10 V, VGS = 0 V, f = 1 MHz

― 85 ― ― 270 ― ― 10 ―

pF

Turn−ON time

Switching time

Fall time

― 16 ―

ns

― 13 ―

Turn−OFF time

Total gate charge (Gate−source

plus gate−drain) Gate−source charge 1 Gate−drain (“miller”) charge

― 70 ― ― 16 ― ― 11 ― ― 5 ―

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Drain reverse current

Pulse (Note 1) IDRP VDSF

Test Condition

Min Typ. Max Unit — — — 20 A IDR = 6 A, VGS = 0 V

— — −1.2 V Forward voltage (diode)

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TPC8402 P-ch

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TPC8402 P-ch

PD – Ta

2.0 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s

DRAIN POWER DISSIPATION PD (W) 1.5 (1) (2) 1.0 (3) 0.5 (4) 0 0 50 100 150 200

AMBIENT TEMPERATURE Ta (°C)

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TPC8402 P-ch

1000 rth − tw

DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) OPERATION (NOTE 3a) 500 (1) SINGLE-DEVICE (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) (4) (3) (2) (1) 300 TRANSIENT THERMAL IMPEDANCE rth (°C/W) 100 50 30 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) 5 3 1 0.5 0.3 SINGLE PULSE 0.1 0.001 0.01 0.1 1 10 100 1000

PULSE WIDTH tw (s)

10

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TPC8402 N-ch

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TPC8402 N-ch

PD – Ta

2.0 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s

DRAIN POWER DISSIPATION PD (W) 1.5 (1) (2) 1.0 (3) 0.5 (4) 0 0 50 100 150 200

AMBIENT TEMPERATURE Ta (°C)

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TPC8402 N-ch

1000 rth − tw

TRANSIENT THERMAL IMPEDANCE rth (°C/W) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) OPERATION (NOTE 3a) 500 (1) SINGLE-DEVICE (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) (4) (3) (2) (1) 300DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) 1005030105310.50.3SINGLE PULSE 0.10.001

0.01

0.1

1

10

100

1000

PULSE WIDTH tw (s)

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TPC8402

RESTRICTIONS ON PRODUCT USE

000707EAA

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice.

11 2002-05-07