Compound semiconductor device

专利名称：Compound semiconductor device发明人：Tetsuro Asano,Masahiro Uekawa,Koichi

Hirata,Mikito Sakakibara

申请号：US10177762申请日：20020624

公开号：US20030013276A1公开日：20030116

专利附图：

摘要：A local oscillation FET has a source connecting pad, a drain connecting pad and agate connecting pad. The source connecting pad occupies one comer of a substrate, andthe drain and gate connecting pads are placed at the neighboring comers so that the

three connecting pads form an L shape on the substrate. As a modification to thisconfiguration, another source connecting pad is placed at the remaining comer of thesubstrate so that the drain and gate connecting pads are shielded from each other bythe two source connecting pads. These device configurations contribute to size reductionof the local oscillation FET.

申请人：SANYO ELECTRIC CO., LTD.

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