Compound semiconductor device

专利名称：Compound semiconductor device发明人：Kenji Sasaki,Kingo Kurotani,Takashi Kitahara申请号：US14932497申请日：20151104公开号：US09825156B2公开日：20171121

专利附图：

摘要：A compound semiconductor device includes a heterojunction bipolar transistorand a bump. The heterojunction bipolar transistor includes a plurality of unit transistors.The bump is electrically connected to emitters of the plurality of unit transistors. Theplurality of unit transistors are arranged in a first direction. The bump is disposed above

the emitters of the plurality of unit transistors while extending in the first direction. Theemitter of at least one of the plurality of unit transistors is displaced from a center lineof the bump in the first direction toward a first side of a second direction which is

perpendicular to the first direction. The emitter of at least another one of the plurality ofunit transistors is displaced from the center line of the bump in the first direction towarda second side of the second direction.

申请人：MURATA MANUFACTURING CO., LTD.

地址：Kyoto-fu JP

国籍：JP

代理机构：Studebaker & Brackett PC

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