Compound semiconductor device

专利名称：Compound semiconductor device发明人：Kikkawa, Toshihide Fujitsu Limited,Imanishi,

Kenji Fujitsu Limited

申请号：EP08153474.5申请日：20080327公开号：EP1976016A3公开日：20100120

专利附图：

摘要：A compound semiconductor device having a transistor structure, includes asubstrate, a first layer (3) formed on the substrate and comprising GaN, a second layer (4)formed over the first layer and containing InN whose lattice constant is larger than the

first layer, a third layer (5) formed over the second layer and comprising GaN whoseenergy bandgap is smaller than the second layer, and a channel region layer (2DEG)formed on the third layer.

申请人：Fujitsu Limited

地址：1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP

国籍：JP

代理机构：Wilding, Frances Ward

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