COMPOUND SEMICONDUCTOR DEVICE

专利名称：COMPOUND SEMICONDUCTOR DEVICE发明人：Takashi Udagawa申请号：US12066055申请日：20060906

公开号：US20090309135A1公开日：20091217

专利附图：

摘要：A compound semiconductor device () includes a compound semiconductorhaving a stacked structure () of a hexagonal single crystal layer (), a boron phosphide-based semiconductor layer () formed on a surface of the hexagonal single crystal layerand a compound semiconductor layer () disposed on the boron phosphide-based

semiconductor layer, and electrodes () disposed on the stacked structure, wherein theboron phosphide-based semiconductor layer is formed of a hexagonal crystal disposedon a surface formed of a (1.1.-2.0.) crystal face of the hexagonal single crystal layer.

申请人：Takashi Udagawa

地址：Chichibu-shi JP

国籍：JP

更多信息请下载全文后查看