Compound semiconductor device

专利名称：Compound semiconductor device发明人：Gilberto Curatola,Oliver Haeberlen申请号：US14887745申请日：20151020公开号：US09397208B2公开日：20160719

专利附图：

摘要：A semiconductor device includes a first compound semiconductor material anda second compound semiconductor material on the first compound semiconductormaterial. The second compound semiconductor material comprises a different materialthan the first compound semiconductor material such that the first compound

semiconductor material has a two-dimensional electron gas (2DEG). The semiconductordevice further includes a buried field plate disposed in the first compound semiconductormaterial and electrically connected to a terminal of the semiconductor device. The 2DEGis interposed between the buried field plate and the second compound semiconductormaterial.

申请人：Infineon Technologies Austria AG

地址：Villach AT

国籍：AT

代理机构：Murphy, Bilak & Homiller, PLLC

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