专利名称：Electrically programmable memory element发明人：Patrick Klersy,Tyler Lowrey申请号：US10981826申请日：20041105
公开号：US20050062132A1公开日：20050324
专利附图：
摘要：A programmable resistance memory element including a memory materialwhich is raised above a semiconductor substrate by a dielectric layer.
申请人：Patrick Klersy,Tyler Lowrey
地址：Lake Orion MI US,San Jose CA US
国籍：US,US
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