Optoelectronic sensor

专利名称：Optoelectronic sensor

发明人：Stefan Lauxtermann,Martin Waeny申请号：US09716168申请日：20001117公开号：US06452153B1公开日：20020917

专利附图：

摘要：The optoelectronic sensor comprises at least two pixels (), each pixel ()

comprising a photodiode (), and means for electrically connecting at least two pixels, theconnecting means comprising FETs () for switching the connection on or off. The pixels ()are designed in such a way that if, e.g., four pixels () are connected the photocharges

generated in the connected pixels () are combined in one of the connected pixels (),whereby the spatial resolution of the sensor is reduced. A skimming FET () arrangedbetween the photodiode () and a charge detection circuit () offers a floating source andfloating drain in each pixel (). Thus the sensor can be manufactured in CMOS technologyand is suited for photocharge binning. The invention makes it possible to vary the spatialresolution, the light sensitivity and/or the readout velocity by purely electronic means.This has the advantage of an increased light sensitivity, and, moreover, of being offsetfree. The power consumption of the sensor is reduced at a constant frame frequency ifthe spatial resolution is reduced.

申请人：CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA

代理机构：Rankin, Hill, Porter & Clark LLP

更多信息请下载全文后查看