专利名称：General protection of an integrated circuit
against permant overloads and electrostaticdischarges
发明人：Francois Tailliet申请号：US09790504申请日：19991130公开号：US07288450B1公开日：20071030
专利附图：
摘要：In an integrated circuit, a diode is interposed between the semiconductorsubstrate and the contact pad to an external bias voltage, and the substrate is biased at
an internal voltage reference. Between each contact pad of the integrated circuit andsemiconductor substrate, there is positioned a protection device against permanentoverloads and a protection device against electrostatic discharges. By isolating thesemiconductor substrate from the external voltages source and by placing a protectiondevice between each contact pad and the substrate, a broad, general protection of theintegrated circuit is obtained against all the destructive phenomena such as overloads,positive and negative overvoltages, polarity reversal and electrostatic discharges.
申请人：Francois Tailliet
地址：Fuveau FR
国籍：FR
代理机构：Gardere Wynne Sewell LLP
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