Method of Manufacturing a High Breakdown Voltage I

专利名称：Method of Manufacturing a High Breakdown

Voltage III-Nitride Device

发明人：Clemens Ostermaier,Gerhard Prechtl,Oliver

Haeberlen

申请号：US14730536申请日：20150604

公开号：US20150311312A1公开日：20151029

专利附图：

摘要：A method of manufacturing a semiconductor device includes forming asemiconductor body including a compound semiconductor material on a substrate, the

compound semiconductor material having a channel region, forming a source regionextending to the compound semiconductor material, forming a drain region extending tothe compound semiconductor material and spaced apart from the source region by thechannel region, and forming an insulating region buried in the semiconductor body belowthe channel region between the compound semiconductor material and the substrate inan active region of the semiconductor device such that the channel region is

uninterrupted by the insulating region. The active region includes the source, the drainand the channel region. The insulating region is discontinuous over a length of thechannel region between the source region and the drain region.

申请人：Infineon Technologies Austria AG

地址：Villach AT

国籍：AT

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